GB/T 14139-2019

Active

Silicon epitaxial wafers

硅外延片

Standard Type

GBT

ICS

29.045

CCS

H82

Status

Active

Issue Date

2019-06-04

Implementation

2020-05-01

Centralized Committee

国家标准委

Issuing Authority

国家市场监督管理总局、中国国家标准化管理委员会

Application Summary AI generated

GB/T 14139-2019 specifies the technical requirements, test methods, inspection rules, and packaging for silicon epitaxial wafers used in semiconductor device manufacturing. It is applied in the electronics industry for producing integrated circuits and discrete devices, particularly where precise epitaxial layer thickness, resistivity, and defect control are critical. The standard ensures quality consistency for wafers supplied to foundries and fabless semiconductor companies.

Related Standards

GB/T 12964-2003 Monocrystalline silicon polished wafers GB/T 16596-1996 Specification for establishing a wafer coordinatesystem GB/T 16595-1996 Specification for a universal wafer grid GB/T 12965-2005 Monocrystalline silicon as cut slices and lapped slices GB/T 20230-2006 Indium phosphide single crystal GB/T 20229-2006 Gallium phosphide single crystal GB/T 20228-2006 Gallium arsenide single crystal GB/T 11071-2006 Zone-refined germanium ingot

Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.